Part Details | TRANSISTOR
5961-01-276-0497 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: BUZ45, BUZ45, 5961-01-276-0497, 01-276-0497, 5961012760497, 012760497
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 02, 1988 | 01-276-0497 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-276-0497
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BUZ45 | 0B549 | SIEMENS COMPONENTS INCINTEGRATED CIRCUIT DIV |
| BUZ45 | 59756 | SIEMENS CORPOEM DIV |
Technical Data | NSN 5961-01-276-0497
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | CG9.60 AMPERES MAXIMUM AND B+8.60 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG125.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 1.365 INCHES MINIMUM AND 1.387 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.280 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |