NSN 5961-01-283-3045

Part Details | TRANSISTOR

5961-01-283-3045 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: HXTR3645, HXTR-3645, HXTR3645, HXTR-3645, 1958183001, 1-958183-001, 10274311, 1027431-1, 1958183001, 1-958183-001, 5961-01-283-3045, 01-283-3045, 5961012833045, 012833045

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 02, 198801-283-304520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-283-3045
Part Number Cage Code Manufacturer
HXTR-36450EU86AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS
HXTR-364550434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
1-958183-00188869EATON CORPELECTRONIC INSTRUMENTATION DIV
1027431-149956RAYTHEON COMPANYDBA RAYTHEON
1-958183-00149374TEGAM, INC.
Technical Data | NSN 5961-01-283-3045
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC18.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
CURRENT RATING PER CHARACTERISTICAC65.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF600.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH0.400 INCHES MINIMUM
OVERALL HEIGHT0.071 INCHES MAXIMUM
OVERALL WIDTH0.400 INCHES MINIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
END ITEM IDENTIFICATION6625-01-195-1067