Part Details | TRANSISTOR
5961-01-292-6706 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 26001896101, 26001896-101, JANTX2N7109, DM1136, 1S153, 5961-01-292-6706, 01-292-6706, 5961012926706, 012926706
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 20, 1989 | 01-292-6706 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-292-6706
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 26001896-101 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| JANTX2N7109 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| DM1136 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 1S153 | 06049 | SQUARE D COEPE/TOPAZ |
Technical Data | NSN 5961-01-292-6706
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.2 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |