Part Details | TRANSISTOR
5961-01-299-3705 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2SK216, 5961-01-299-3705, 01-299-3705, 5961012993705, 012993705
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 30, 1989 | 01-299-3705 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-299-3705
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SK216 | 62786 | HITACHI AMERICA, LTD. |
Technical Data | NSN 5961-01-299-3705
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD500.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AL30.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL LENGTH | 12.7 MILLIMETERS MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 15.3 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 4.8 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 11.5 MILLIMETERS MAXIMUM |