Part Details | TRANSISTOR
5961-01-301-4750 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: BSV81, BSV81, BSV81, BSV81, 5961-01-301-4750, 01-301-4750, 5961013014750, 013014750
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 29, 1989 | 01-301-4750 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-301-4750
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BSV81 | K0577 | BRITISH SAROZAL LTD |
| BSV81 | 25403 | PHILIPS CIRCUIT ASSEMBLIES |
| BSV81 | 18324 | PHILIPS SEMICONDUCTORS INC |
| BSV81 | K0004 | VISHAY |
Technical Data | NSN 5961-01-301-4750
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 10.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD25.00 MILLIAMPERES MAXIMUM AND BZ50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 12.7 MILLIMETERS MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 5.3 MILLIMETERS MAXIMUM |
| OVERALL DIAMETER | 4.8 MILLIMETERS MAXIMUM |