Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-302-4140 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BZX55C6V8, BZX55C6V8, BZX55-C6V8, BZX55C6V8, 5961-01-302-4140, 01-302-4140, 5961013024140, 013024140
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 14, 1989 | 01-302-4140 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-302-4140
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BZX55C6V8 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| BZX55-C6V8 | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| BZX55C6V8 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
Technical Data | NSN 5961-01-302-4140
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.4 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| POWER RATING PER CHARACTERISTIC | AG500.0 MILLIWATTS NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 25.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 26.0 MILLIMETERS MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.5 MILLIMETERS NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 4.05 MILLIMETERS MAXIMUM |
| OVERALL DIAMETER | 1.58 MILLIMETERS MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |