NSN 5961-01-316-0998

Part Details | TRANSISTOR

5961-01-316-0998 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 0121431DCR, 012143-1DCR, 2N5434, 5961-01-316-0998, 01-316-0998, 5961013160998, 013160998

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 02, 199001-316-099820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-316-0998
Part Number Cage Code Manufacturer
012143-1DCR17981SCI SYSTEMS INC
2N543417856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-316-0998
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD400.00 MILLIAMPERES MAXIMUM AND AK100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.150 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE