Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-317-3138 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: G200R4SB, 5961-01-317-3138, 01-317-3138, 5961013173138, 013173138
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 27, 1990 | 01-317-3138 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-317-3138
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G200R4SB | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
Technical Data | NSN 5961-01-317-3138
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 28.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG200.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 110.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-9 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.750 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 7.178 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 1.443 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |