Part Details | TRANSISTOR
5961-01-325-0453 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 411918, 411918, UNF120, IRFF120, 5961-01-325-0453, 01-325-0453, 5961013250453, 013250453
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 27, 1990 | 01-325-0453 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-325-0453
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 411918 | 20284 | AIMTRON SYSTEMS LLCDBA TARGET |
| 411918 | 12909 | CARDION INC |
| UNF120 | 12969 | MICRO USPD INC |
| IRFF120 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-325-0453
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD8.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG40.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.328 INCHES MAXIMUM |
| OVERALL WIDTH | 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM |
| FIELD FORCE EFFECT TYPE | |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| END ITEM IDENTIFICATION | INDICATOR GROUP AN/SPA-25G |