Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-327-1103 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MA4P093, 3533781012, 353-3781-012, A61066P237, 5961-01-327-1103, 01-327-1103, 5961013271103, 013271103
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 07, 1990 | 01-327-1103 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-327-1103
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MA4P093 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 353-3781-012 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| A61066P237 | 17540 | SKYWORKS SOLUTIONS, INC. |
Technical Data | NSN 5961-01-327-1103
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 40.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH150.00 NANOAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF3.0 WATTS MAXIMUM |
| CAPACITANCE RATING IN PICOFARADS | 0.2 MINIMUM AND 0.4 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 1 FLANGE AND 1 CASE |
| OVERALL LENGTH | 0.045 INCHES NOMINAL |
| OVERALL DIAMETER | 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |