Part Details | TRANSISTOR
5961-01-331-3950 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 403089, SF58014, J2094, 5961-01-331-3950, 01-331-3950, 5961013313950, 013313950
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 19, 1990 | 01-331-3950 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-331-3950
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 403089 | 89536 | FLUKE CORPORATION |
| SF58014 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| J2094 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-331-3950
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -20.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND -1.0 MINIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -3.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BWM3.00 NANOAMPERES MAXIMUM AND BR30.00 MILLIAMPERES MINIMUM |
| POWER RATING PER CHARACTERISTIC | AG200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.670 INCHES MINIMUM |
| OVERALL WIDTH | 0.145 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |