Part Details | TRANSISTOR
5961-01-338-2169 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 711317, JANTXV2N6770, 5961-01-338-2169, 01-338-2169, 5961013382169, 013382169
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 28, 1991 | 01-338-2169 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-338-2169
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 711317 | 19623 | GE AVIATION SYSTEMS LLCDBA GE AVIATION |
| JANTXV2N6770 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-338-2169
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AD12.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG150.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AA |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 39.69 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 6.4 MILLIMETERS MINIMUM AND 11.4 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 26.66 MILLIMETERS MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |