NSN 5961-01-338-2170

Part Details | TRANSISTOR

5961-01-338-2170 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6301, SJ5957, 2001016002, 20-01016-002, STJ6012, 5961-01-338-2170, 01-338-2170, 5961013382170, 013382170

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 28, 199101-338-217020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-338-2170
Part Number Cage Code Manufacturer
2N630104713FREESCALE SEMICONDUCTOR, INC.
SJ595704713FREESCALE SEMICONDUCTOR, INC.
20-01016-00200724RAYTHEON COMPANYDBA RAYTHEON
STJ601207256SILICON TRANSISTOR CORPSUB OF BBF INC
Technical Data | NSN 5961-01-338-2170
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT-DARLINGTON CONNECTED
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC8.00 AMPERES MAXIMUM AND AB120.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG75.0 WATTS MAXIMUM
TRANSFER RATIO4.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-66
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH1.252 INCHES MAXIMUM
OVERALL HEIGHT0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL WIDTH0.700 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN