Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-341-1422 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MIS1983687, MIS-19836/87, MIS1983687, MIS-19836/87, MIS1983687, MIS-19836/87, MIS1983687, MIS-19836/87, MIS1983687, MIS-19836/87, MIS1983687, MIS-19836/87, MIS1983687, MIS-19836/87, 5961-01-341-1422, 01-341-1422, 5961013411422, 013411422
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 25, 1991 | 01-341-1422 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-341-1422
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MIS-19836/87 | 52GC4 | MACOM TECHNOLOGY SOLUTIONS HOLDINGS,INC. |
| MIS-19836/87 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| MIS-19836/87 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MIS-19836/87 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| MIS-19836/87 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| MIS-19836/87 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| MIS-19836/87 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-341-1422
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.50 NOMINAL REGULATOR VOLTAGE |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 1 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |