Part Details | TRANSISTOR
5961-01-345-8033 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: VP0808M, 5961-01-345-8033, 01-345-8033, 5961013458033, 013458033
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 24, 1991 | 01-345-8033 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-345-8033
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VP0808M | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-345-8033
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -80.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CYM3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-237 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.280 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.165 INCHES MAXIMUM |
| OVERALL WIDTH | 0.160 INCHES MAXIMUM |