Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-347-4135 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: T4120M, 5961-01-347-4135, 01-347-4135, 5961013474135, 013474135
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 21, 1991 | 01-347-4135 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-347-4135
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| T4120M | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-347-4135
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | FN100.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE16.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 1.480 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.561 INCHES MINIMUM |
| FUNCTION FOR WHICH DESIGNED | BIDIRECTIONAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |