Part Details | TRANSISTOR
5961-01-350-9536 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MJ2N6316HXV, PP8549, H9801151B, H980115-1B, H980110001B, H980110-001B, 5961-01-350-9536, 01-350-9536, 5961013509536, 013509536
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 27, 1991 | 01-350-9536 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-350-9536
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MJ2N6316HXV | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| PP8549 | 33178 | MICROSEMI PPC INC |
| H980115-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| H980110-001B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-350-9536
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC7.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF90.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.252 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.700 INCHES MAXIMUM |
| FEATURES PROVIDED | BURN IN |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |