Part Details | TRANSISTOR
5961-01-352-0727 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5715, RELEASE 5960, 2N5715, 5961-01-352-0727, 01-352-0727, 5961013520727, 013520727
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 19, 1992 | 01-352-0727 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-352-0727
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5715 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 5960 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5715 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-352-0727
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.5 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 50.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.650 INCHES MAXIMUM |
| SPECIFICATION/STANDARD DATA | 80131-RELEASE 5960 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD |