Part Details | TRANSISTOR
5961-01-353-1487 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NE71000VCGE 2, NH7555161P31, 7555161P31, 5961-01-353-1487, 01-353-1487, 5961013531487, 013531487
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 05, 1992 | 01-353-1487 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-353-1487
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NE71000VCGE 2 | 62104 | CALIFORNIA EASTERN LABS |
| NH7555161P31 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 7555161P31 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
Technical Data | NSN 5961-01-353-1487
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD120.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL AND CERAMIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 5 BONDING PAD |
| OVERALL LENGTH | 0.0177 INCHES NOMINAL |
| OVERALL HEIGHT | 0.005 INCHES MINIMUM AND 0.006 INCHES MAXIMUM |
| OVERALL WIDTH | 0.0157 INCHES NOMINAL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |