NSN 5961-01-354-0374

Part Details | TRANSISTOR

5961-01-354-0374 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: G390363S1, IXTM1030, APTHC1055, NSE6517, 5961-01-354-0374, 01-354-0374, 5961013540374, 013540374

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 21, 199201-354-037420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-354-0374
Part Number Cage Code Manufacturer
G390363S124930HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, RADAR
IXTM10300A5K5IXYS CORPORATION
APTHC10550DY74MICROSEMI CORP. - POWER PRODUCTSGROUP
NSE651743611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
Technical Data | NSN 5961-01-354-0374
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC900.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 900.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD11.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF250.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE DRAIN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT0-204
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN
OVERALL LENGTH1.550 INCHES MAXIMUM
OVERALL HEIGHT0.691 INCHES MINIMUM AND 0.835 INCHES MAXIMUM
OVERALL WIDTH0.978 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
FEATURES PROVIDED ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX