Part Details | TRANSISTOR
5961-01-355-7543 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 6457331, 645733-1, V12304, 5961-01-355-7543, 01-355-7543, 5961013557543, 013557543
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 22, 1992 | 01-355-7543 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-355-7543
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 645733-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| V12304 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-355-7543
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD0.20 AMPERES MAXIMUM AND AK100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF315.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |