Part Details | TRANSISTOR
5961-01-357-4207 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NH7548671P603, HMF06000022C, HMF-06000-022C, 7548671P603, 7548671P0603, 5961-01-357-4207, 01-357-4207, 5961013574207, 013574207
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 23, 1992 | 01-357-4207 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-357-4207
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NH7548671P603 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| HMF-06000-022C | 61294 | HARRIS MICROWAVE SEMICONDUCTOR INCSUB OF HARRIS CORP |
| 7548671P603 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| 7548671P0603 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
Technical Data | NSN 5961-01-357-4207
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BS30.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF2.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 180.0 DEG CELSIUS JUNCTION |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |