Part Details | TRANSISTOR
5961-01-364-1223 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8482741, 848274-1, 8482741, 848274-1, 8482741, 848274-1, 1S051, SD211DE2, SD211DE-2, SD211DE2, SD211DE-2, 5961-01-364-1223, 01-364-1223, 5961013641223, 013641223
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 11, 1992 | 01-364-1223 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-364-1223
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 848274-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 848274-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 848274-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1S051 | 61837 | SEMI PROCESSES INC |
| SD211DE-2 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SD211DE-2 | 0CCB6 | ZEUS COMPONENTS |
Technical Data | NSN 5961-01-364-1223
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| END ITEM IDENTIFICATION | RECEIVER |