Part Details | TRANSISTOR
5961-01-364-1224 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 755002C70011, 755002C7001-1, FN4937, 5961-01-364-1224, 01-364-1224, 5961013641224, 013641224
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 11, 1992 | 01-364-1224 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-364-1224
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 755002C7001-1 | 87990 | QUARTERMASTER GENERAL |
| FN4937 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-364-1224
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 MINIMUM FORWARD GATE TO SOURCE BREAKDOWN VOLTAGE AND -1.0 MINIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BWM150.00 MICROAMPERES MAXIMUM AND BR20.00 MILLIAMPERES MINIMUM AND BR60.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BJ300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |