Part Details | TRANSISTOR
5961-01-364-9319 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 587R892H01, 587R892H01, DM1215, 5961-01-364-9319, 01-364-9319, 5961013649319, 013649319
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 28, 1992 | 01-364-9319 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-364-9319
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 587R892H01 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| 587R892H01 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| DM1215 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-364-9319
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -15.0 MINIMUM GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 20.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND -0.3 MINIMUM GATE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SUBSTRATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |