Part Details | TRANSISTOR
5961-01-376-4275 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1RFP150, 000121823, 000-121-823, IRFP150, 99183756, 5961-01-376-4275, 01-376-4275, 5961013764275, 013764275
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 02, 1993 | 01-376-4275 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-376-4275
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1RFP150 | 1EE70 | FURUNO U.S.A., INC.DBA (FOREIGN PARENT IS FURUNO |
| 000-121-823 | 1EE70 | FURUNO U.S.A., INC.DBA (FOREIGN PARENT IS FURUNO |
| IRFP150 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 99183756 | F6481 | THALES SA |
Technical Data | NSN 5961-01-376-4275
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD42.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG160.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-247AC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 1.334 INCHES MINIMUM AND 1.383 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM |
| OVERALL WIDTH | 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM |