NSN 5961-01-383-8149

Part Details | TRANSISTOR

5961-01-383-8149 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: NE64535(C)RKL, NE64535D, NE64535-D, 3521522012, 352-1522-012, 3521522010, 352-1522-010, 151060800, 151-0608-00, 5961-01-383-8149, 01-383-8149, 5961013838149, 013838149

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 03, 199301-383-814920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-383-8149
Part Number Cage Code Manufacturer
NE64535(C)RKL62104CALIFORNIA EASTERN LABS
NE64535-D33297NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV
352-1522-01213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-1522-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
151-0608-0080009TEKTRONIX, INC.DBA TEKTRONIX
Technical Data | NSN 5961-01-383-8149
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC65.00 MILLIAMPERES MAXIMUM AND BF0.10 MICROAMPERES MAXIMUM AND BL1.00 MICROAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICBG400.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH3.8 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH10.15 MILLIMETERS NOMINAL
OVERALL HEIGHT1.8 MILLIMETERS MAXIMUM
OVERALL WIDTH10.15 MILLIMETERS NOMINAL
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN