Part Details | TRANSISTOR
5961-01-406-5423 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 68353, JANTX2N5671, 6097275, 6097275, 5961-01-406-5423, 01-406-5423, 5961014065423, 014065423
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 06, 1995 | 01-406-5423 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-406-5423
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 68353 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| JANTX2N5671 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 6097275 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 6097275 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-406-5423
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| SPECIAL FEATURES | THIS ITEM IS SELECTED FOR: FALL = 0.25 US MAX. |
| END ITEM IDENTIFICATION | AN/SLQ-48, VE E/I FSCM 53711 |