NSN 5961-01-408-5200

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-408-5200 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: MA4P093S, MA4P093S, 9959502074, 995-9502-074, 3533781042, 353-3781-042, A61071P135, 5961-01-408-5200, 01-408-5200, 5961014085200, 014085200

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 18, 199501-408-520020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-408-5200
Part Number Cage Code Manufacturer
MA4P093S1HJ31M/A-COM INC.DIV BURLINGTON SEMICONDUCTOR
MA4P093S55NN2MACOM TECHNOLOGY SOLUTIONS INC.DBA M/A-COM
995-9502-07413499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-3781-04213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
A61071P13517540SKYWORKS SOLUTIONS, INC.
Technical Data | NSN 5961-01-408-5200
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
POWER RATING PER CHARACTERISTICCK3.0 WATTS MAXIMUM AND CN300.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL CERAMIC AND METAL
MOUNTING METHOD COMPRESSION
TERMINAL TYPE AND QUANTITY2 CASE
OVERALL LENGTH0.145 INCHES MINIMUM AND 0.161 INCHES MAXIMUM
OVERALL DIAMETER0.118 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED LIMITER
TEST DATA DOCUMENT13499-353-3781 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
END ITEM IDENTIFICATIONGPSMAGR RF