NSN 5961-01-413-3882

Part Details | TRANSISTOR

5961-01-413-3882 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 111041, SNF1059, 7230797, 723079-7, SNF1059, 5961-01-413-3882, 01-413-3882, 5961014133882, 014133882

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 12, 199501-413-388220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-413-3882
Part Number Cage Code Manufacturer
11104165892MELTRONIX INC
SNF105943611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
723079-705869RAYTHEON COMPANYDBA RAYTHEON
SNF105907256SILICON TRANSISTOR CORPSUB OF BBF INC
Technical Data | NSN 5961-01-413-3882
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD10.00 AMPERES MAXIMUM AND BZ10.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF416.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE DRAIN
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY12 PIN AND 1 CASE
OVERALL LENGTH1.832 INCHES NOMINAL
OVERALL HEIGHT0.250 INCHES NOMINAL
OVERALL WIDTH1.200 INCHES NOMINAL
TEST DATA DOCUMENT05869-723079-7 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)