Part Details | TRANSISTOR
5961-01-422-4900 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 356A1450P23, IRFR9210, 3815091, 381509-1, 5961-01-422-4900, 01-422-4900, 5961014224900, 014224900
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 03, 1995 | 01-422-4900 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-422-4900
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 356A1450P23 | 89954 | BAE SYSTEMS CONTROLS INC. |
| IRFR9210 | 59993 | INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging |
| 381509-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-422-4900
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| POWER RATING PER CHARACTERISTIC | AG25.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC AND METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.410 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.096 INCHES MAXIMUM |
| OVERALL WIDTH | 0.268 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 37695-381509 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | ARC-222 |