Part Details | TRANSISTOR
5961-01-422-6529 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: BF994S PART 1, BF994S, BF994S PART 1, 6474681, 647468-1, 5961-01-422-6529, 01-422-6529, 5961014226529, 014226529
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 06, 1995 | 01-422-6529 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-422-6529
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BF994S PART 1 | 59377 | MICROSEMI CORP-COLORADO |
| BF994S | H1R01 | NXP SEMICONDUCTORS NETHERLANDS B.V. |
| BF994S PART 1 | 18324 | PHILIPS SEMICONDUCTORS INC |
| 647468-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-422-6529
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD30.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.119 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.061 INCHES MAXIMUM |
| OVERALL WIDTH | 0.103 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 37695-647468 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |