Part Details | TRANSISTOR
5961-01-434-0312 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NEO2135(D), NE02135TR1, 3521163010, 352-1163-010, 5961-01-434-0312, 01-434-0312, 5961014340312, 014340312
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 17, 1996 | 01-434-0312 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-434-0312
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NEO2135(D) | 62104 | CALIFORNIA EASTERN LABS |
| NE02135TR1 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
| 352-1163-010 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
Technical Data | NSN 5961-01-434-0312
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC70.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BN290.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG FAHRENHEIT JUNCTION |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.414 INCHES MINIMUM |
| OVERALL HEIGHT | 0.071 INCHES MINIMUM |
| OVERALL WIDTH | 0.414 INCHES MINIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| END ITEM IDENTIFICATION | PACER DAWN |