Part Details | TRANSISTOR
5961-01-439-4650 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRF620, 933798760682, 9337-987-60682, 5961-01-439-4650, 01-439-4650, 5961014394650, 014394650
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 09, 1996 | 01-439-4650 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-439-4650
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRF620 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 9337-987-60682 | F6170 | THALES OPTRONIQUE SAS |
Technical Data | NSN 5961-01-439-4650
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | CY100.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE40.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 15.8 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 10.6 MILLIMETERS NOMINAL |