Part Details | TRANSISTOR
5961-01-463-0632 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2SB1115, 2SB1115, 5961-01-463-0632, 01-463-0632, 5961014630632, 014630632
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 04, 1999 | 01-463-0632 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-463-0632
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SB1115 | 0T1F7 | ANRITSU COMPANY |
| 2SB1115 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-463-0632
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON ALLOY |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | BGM100.00 MILLIAMPERES MAXIMUM AND BLM100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BG2.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 4.000 MILLIMETERS MAXIMUM |
| END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297 |