Part Details | TRANSISTOR
5961-01-463-0640 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: FA1L3Z, FA1L3Z, 5961-01-463-0640, 01-463-0640, 5961014630640, 014630640
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 04, 1999 | 01-463-0640 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-463-0640
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FA1L3Z | 0T1F7 | ANRITSU COMPANY |
| FA1L3Z | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-463-0640
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 2.9 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 1.1 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 2.8 MILLIMETERS NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297 |