Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-464-0827 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 2SA1206, 2SA1206, 5961-01-464-0827, 01-464-0827, 5961014640827, 014640827
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 15, 1999 | 01-464-0827 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-464-0827
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SA1206 | 0T1F7 | ANRITSU COMPANY |
| 2SA1206 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-464-0827
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | CF600.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 0.210 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.670 INCHES MAXIMUM |
| OVERALL WIDTH | 0.210 INCHES MAXIMUM |
| END ITEM IDENTIFICATION | 6625014430552E/IFSCM0T1F7 |