Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-464-1751 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1SS84, 1SS84, 5961-01-464-1751, 01-464-1751, 5961014641751, 014641751
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 20, 1999 | 01-464-1751 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-464-1751
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1SS84 | 0T1F7 | ANRITSU COMPANY |
| 1SS84 | 61485 | HITACHI KOKUSAI ELECTRIC AMERICA,LTD. |
Technical Data | NSN 5961-01-464-1751
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | AG450.00 MILLIAMPERES MAXIMUM AND CF1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG250.0 MILLIWATTS MAXIMUM |
| CAPACITANCE RATING IN PICOFARADS | 5.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 26.0 MILLIMETERS MINIMUM |
| TERMINAL CIRCLE DIAMETER | 2.000 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 4.2 MILLIMETERS MAXIMUM |
| OVERALL DIAMETER | 2.0 MILLIMETERS MAXIMUM |
| END ITEM IDENTIFICATION | 6625014252551E/IFSCM03950 |