Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-464-4127 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 2SC3356, 2SC3356, 5961-01-464-4127, 01-464-4127, 5961014644127, 014644127
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 28, 1999 | 01-464-4127 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-464-4127
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SC3356 | 0T1F7 | ANRITSU COMPANY |
| 2SC3356 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-464-4127
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | CF200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 1.400 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 2.500 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 1.100 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | UHF/MICROWAVE NPN BJT |
| END ITEM IDENTIFICATION | 6625014430552E/IFSCM0T1F7 |