NSN 5961-01-466-0299

Part Details | TRANSISTOR

5961-01-466-0299 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2SC3568, 2SC3568, 5961-01-466-0299, 01-466-0299, 5961014660299, 014660299

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 01, 199901-466-029920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-466-0299
Part Number Cage Code Manufacturer
2SC35680T1F7ANRITSU COMPANY
2SC356833297NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV
Technical Data | NSN 5961-01-466-0299
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
CURRENT RATING PER CHARACTERISTICAC10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICCF30.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT-55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
MOUNTING FACILITY QUANTITY3
TERMINAL LENGTH4.400 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH7.900 MILLIMETERS MAXIMUM
OVERALL WIDTH10.200 MILLIMETERS MAXIMUM
SPECIAL FEATURESLOW-FREQUENCY POWER SILICON NPNBJT
END ITEM IDENTIFICATIONGENERAL PURPOSE TEST EQUIPMENT