Part Details | TRANSISTOR
5961-01-466-1430 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2SA1463, 2SA1463, 5961-01-466-1430, 01-466-1430, 5961014661430, 014661430
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 08, 1999 | 01-466-1430 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-466-1430
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SA1463 | 0T1F7 | ANRITSU COMPANY |
| 2SA1463 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-466-1430
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | CF2.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 2.600 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 4.250 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 4.600 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | LOW FREQUENCY LOW POWER SILICON PNP BJT |
| END ITEM IDENTIFICATION | 6625014430552, GENERAL PURPOSE ELECTRONIC TEST EQUIPMERNT |