NSN 5961-01-511-4261

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-511-4261 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 1N6465, 19945921, 1994592-1, 5961-01-511-4261, 01-511-4261, 5961015114261, 015114261

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 07, 200301-511-426120589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-511-4261
Part Number Cage Code Manufacturer
1N646512969MICRO USPD INC
1994592-196214RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-511-4261
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC27.0 MINIMUM BREAKDOWN VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAQ12.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICC+500.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.975 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.040 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.300 INCHES MAXIMUM
OVERALL DIAMETER0.145 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED TRANSIENT SUPPRESSOR