Part Details | TRANSISTOR
5961-01-514-2180 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: F1007, 5961-01-514-2180, 01-514-2180, 5961015142180, 015142180
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 20, 2003 | 01-514-2180 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-514-2180
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| F1007 | 1HW28 | R F POLYFET DEVICES INC |
Technical Data | NSN 5961-01-514-2180
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD4.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG100.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | SLOT |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.975 INCHES NOMINAL |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
| OVERALL WIDTH | 0.670 INCHES NOMINAL |
| FEATURES PROVIDED | LOW NOISE |
| SPECIAL FEATURES | GOLD METALIZED; PACKAGE STYLE - AK; HIGH EFFICIENCY; LINEAR; HIGH GAIN; MAXIMUM JUNCTION TEMPERATURE PLUS 200.0 DEGREES C; STORAGE TEMPERATURE MINUS 65.0 TO PLUS 150.0 DEGREES C; DESIGNED SPECIFICALLY FOR BROADBAND RADIO FREQUENCY (RF) APPLICATIONS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SILICON RF POWER, VDMOS TRANSISTOR |