Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-524-9025 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MCD16208IO1, MCD162-08IO1, 13703PL REF DES CR1 THRU CR6, 137-03-PL REF DES CR1 THRU CR6, 13703DWG REF DES CR1 THRU CR6, 137-03-DWG REF DES CR1 THRU CR6, 5961-01-524-9025, 01-524-9025, 5961015249025, 015249025
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 20, 2004 | 01-524-9025 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-524-9025
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MCD162-08IO1 | 0A5K5 | IXYS CORPORATION |
| 137-03-PL REF DES CR1 THRU CR6 | 38370 | PIVOTAL POWER INCDBA DRS PIVOTAL POWER |
| 137-03-DWG REF DES CR1 THRU CR6 | 38370 | PIVOTAL POWER INCDBA DRS PIVOTAL POWER |
Technical Data | NSN 5961-01-524-9025
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | DQ190.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AX120.0 WATTS MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 SCREW |
| OVERALL LENGTH | 94.0 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 34.0 MILLIMETERS NOMINAL |
| SPECIAL FEATURES | ISOLATION VOLTAGE 3600 V |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | THYRISTOR MODULE |