Part Details | TRANSISTOR
5961-01-543-4534 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: H980122001B, H980122-001B, 4SL0041, 4SL004-1, 5961-01-543-4534, 01-543-4534, 5961015434534, 015434534
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 13, 2006 | 01-543-4534 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-543-4534
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| H980122-001B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 4SL004-1 | 0TH60 | SAC-TEC LABS, INC. |
Technical Data | NSN 5961-01-543-4534
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD150.00 AMPERES MAXIMUM AND BZ150.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG125.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 SCREW |
| OVERALL LENGTH | 3.620 INCHES NOMINAL |
| OVERALL HEIGHT | 1.125 INCHES NOMINAL |
| OVERALL WIDTH | 1.125 INCHES NOMINAL |
| END ITEM IDENTIFICATION | FA-18 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON |