Part Details | TRANSISTOR
5961-01-545-8609 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: A3263509, 5961-01-545-8609, 01-545-8609, 5961015458609, 015458609
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 29, 2006 | 01-545-8609 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-545-8609
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A3263509 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-545-8609
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG1.2 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 4 PIN |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.670 INCHES MINIMUM AND 0.710 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | OPERATING TEMPERATURE:-65 TO 200 DEGREES CELSIUS |
| END ITEM IDENTIFICATION | CIRCUIT CARD ASSY |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | (INAVY)SEMICONDUCTOR DEVIC;(DRAWING)SEMICONDUCTOR DEVICE, TRANSISTOR, AMPLIFIER, PNP, SILICON(A3263509) |