NSN 5961-01-579-5550

Part Details | TRANSISTOR

5961-01-579-5550 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MJ15015G, 5961-01-579-5550, 01-579-5550, 5961015795550, 015795550

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 17, 200901-579-555020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-579-5550
Part Number Cage Code Manufacturer
MJ15015G59PE1ON SEMICONDUCTOR
Technical Data | NSN 5961-01-579-5550
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC120.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
CURRENT RATING PER CHARACTERISTICAC15.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICBH180.0 WATTS MAXIMUM
TRANSFER RATIO5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 70.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN
OVERALL LENGTH1.550 INCHES NOMINAL
OVERALL HEIGHT0.815 INCHES MAXIMUM
OVERALL WIDTH1.050 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED GENERAL PURPOSE
FEATURES PROVIDED HIGH POWER
SPECIAL FEATURESTYPE TO-204(TO-3);CONTAINER TYPE-TRAY;QUANTITY 100;DESIGNED FOR HIGH POWER AUDIO,STEPPING MOTOR AND LINEAR APPLICATIONS;USED IN POWER SWITCHING CIRCUITS-RELAYS OR SOLENOID DRIVERS,DC TO DC CONVERTERS,INVERTERS OR INDUCTIVE LOADS
SPECIAL TEST FEATURESPB-FREE
END ITEM IDENTIFICATIONEF2000 AIRCRAFT
PART NAME ASSIGNED BY CONTROLLING AGENCYDISCRETE NPN TRANSISTOR