Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-598-9426 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: RHRP860, 5961-01-598-9426, 01-598-9426, 5961015989426, 015989426
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 02, 2011 | 01-598-9426 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-598-9426
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RHRP860 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
Technical Data | NSN 5961-01-598-9426
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON ALLOY |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MINIMUM WORKING PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| SPECIAL FEATURES | THIS DIODE IS OF SILICON NITRIDE PASSIVATED ION-IMPLANTED EPITAXIAL PLANAR CONSTRUCTION AND TAKES 8 AMPS. |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | HYPERFAST DIODE |