Part Details | TRANSISTOR
5961-01-624-7502 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MRF18090AR3, 5961-01-624-7502, 01-624-7502, 5961016247502, 016247502
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 14, 2014 | 01-624-7502 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-624-7502
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MRF18090AR3 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
Technical Data | NSN 5961-01-624-7502
| Characteristic | Specifications |
|---|---|
| INTERNAL CONFIGURATION | FIELD EFFECT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -0.5 MINIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BR10.0 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | CK90.0 WATTS NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 1.335 INCHES MINIMUM AND 1.345 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.147 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL WIDTH | 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | PROGRAMMABLE TRANSISTOR |
| SPECIAL FEATURES | TECH DATA SHOWS THIS ITEM WAS NO LONGER MANUFACTURED SINCE 2010; IN TAPE AND REEL, R3 SUFFIX =250 UNITS PER 56MM, 13 INCH REEL; ROHS COMPLIANT; DESIGNED FOR GSM AND GSM EDGE BASE STATION APPLICATIONS WITH FREQUENCIES FROM 1800 TO 2000 MHZ; DESIGNED FOR MAX GAIN AND INSERTION PHASE FLATNESS; SUITABLE FOR FM, TDMA, CDMA AND MULTICARRIER AMPLIFIER APPLICATIONS; TO BE USED IN CLASS AB FOR GSM AND GSM EDGE CELLULAR RADIO APPLICATIONS; INTEGRATED ESD PROTECTIONS; HIGH EFFICIENCY; HIGH LINEARITY |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF POWER FIELD EFFECT TRANSISTOR |