NSN 5961-01-653-2159

Part Details | TRANSISTOR

5961-01-653-2159 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: IRGB4062DPBF, 5961-01-653-2159, 01-653-2159, 5961016532159, 016532159

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 15, 201601-653-215920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-653-2159
Part Number Cage Code Manufacturer
IRGB4062DPBF81483INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R
Technical Data | NSN 5961-01-653-2159
Characteristic Specifications
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
POWER RATING PER CHARACTERISTICAF125.0 WATTS MINIMUM AND AF250.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
TERMINAL LENGTH0.580 INCHES MAXIMUM
OVERALL LENGTH0.420 INCHES MAXIMUM
OVERALL HEIGHT1.210 INCHES MAXIMUM
OVERALL WIDTH0.190 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED RECTIFIER
SPECIAL FEATURESINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. NOT RECOMMENDED FOR SURFACE MOUNT APPLICATION.
END ITEM IDENTIFICATIONREMOTE MONITORING AND LOGGING SYSTEM (RMLS)